Shubnikov-de Haas effect in n-CdSb:In under pressure
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Abstract
Magnetoresistance (MR) of single crystals of the group II-V semiconductor n-CdSb doped with In is investigated in magnetic fields B up to 7 T and temperatures T between 1.2 and 2.4 K under hydrostatic pressure p = 0-10 kbar. Shubnikov-de Haas (SdH) oscillations of MR observed up to B ∼ 4 T are characterized by a single period, giving evidence for one participating group of conduction band electrons. Pressure dependence of the SdH period and concentration reveal a second group of charge carriers, connected to a resonance impurity band with delocalized states. The SdH amplitude, A, exhibits non-universal behavior attributable to its sensitivity to scattering mechanism at low quantum numbers. The parameters characterizing the non-universality of A(T) and the pressure dependence of the cyclotron effective mass, mc(p), and of the concentration of conduction electrons, nSdH, are given. The dependences of mc and the Fermi energy on pressure are consistent with Kane-type non-parabolicity of the conduction band.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Shubnikov-de Haas effect in n-CdSb:In under pressure</title><author><name sortKey="Laiho, R" uniqKey="Laiho R">R. Laiho</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Wihuri Physical Laboratory, University of Turku</s1><s2>20014 Turku</s2><s3>FIN</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Finlande</country><wicri:noRegion>20014 Turku</wicri:noRegion></affiliation></author><author><name sortKey="Lashkul, A V" uniqKey="Lashkul A">A. V. Lashkul</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics and Mathematics, Lappeenranta University of Technology</s1><s2>53851 Lappeenranta</s2><s3>FIN</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Finlande</country><wicri:noRegion>53851 Lappeenranta</wicri:noRegion></affiliation></author><author><name sortKey="Lisunov, K G" uniqKey="Lisunov K">K. G. Lisunov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Wihuri Physical Laboratory, University of Turku</s1><s2>20014 Turku</s2><s3>FIN</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Finlande</country><wicri:noRegion>20014 Turku</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics and Mathematics, Lappeenranta University of Technology</s1><s2>53851 Lappeenranta</s2><s3>FIN</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Finlande</country><wicri:noRegion>53851 Lappeenranta</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Institute of Applied Physics ASM, Academiei Str. 5</s1><s2>2028 Kishinev</s2><s3>MDA</s3><sZ>3 aut.</sZ></inist:fA14><country>Moldavie</country><wicri:noRegion>2028 Kishinev</wicri:noRegion></affiliation></author><author><name sortKey="L Hderanta, E" uniqKey="L Hderanta E">E. L Hderanta</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics and Mathematics, Lappeenranta University of Technology</s1><s2>53851 Lappeenranta</s2><s3>FIN</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Finlande</country><wicri:noRegion>53851 Lappeenranta</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">09-0452090</idno><date when="2009">2009</date><idno type="stanalyst">PASCAL 09-0452090 INIST</idno><idno type="RBID">Pascal:09-0452090</idno><idno type="wicri:Area/Main/Corpus">004E59</idno><idno type="wicri:Area/Main/Repository">004C19</idno></publicationStmt><seriesStmt><idno type="ISSN">0268-1242</idno><title level="j" type="abbreviated">Semicond. sci. technol.</title><title level="j" type="main">Semiconductor science and technology</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Cadmium antimonides</term><term>Charge carriers</term><term>Conduction electron</term><term>Cyclotron mass</term><term>Doping</term><term>Electron delocalization</term><term>Hydrostatic pressure</term><term>Impurity bands</term><term>Indium additions</term><term>Magnetic field effects</term><term>Magnetoresistance</term><term>Monocrystals</term><term>Oscillations</term><term>Shubnikov-de Haas effect</term><term>n type semiconductor</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Effet Shubnikov de Haas</term><term>Magnétorésistance</term><term>Effet champ magnétique</term><term>Pression hydrostatique</term><term>Oscillation</term><term>Electron conduction</term><term>Masse effective cyclotron</term><term>Dopage</term><term>Addition indium</term><term>Porteur charge</term><term>Bande impureté</term><term>Délocalisation électronique</term><term>Antimoniure de cadmium</term><term>Monocristal</term><term>Semiconducteur type n</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Dopage</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Magnetoresistance (MR) of single crystals of the group II-V semiconductor n-CdSb doped with In is investigated in magnetic fields B up to 7 T and temperatures T between 1.2 and 2.4 K under hydrostatic pressure p = 0-10 kbar. Shubnikov-de Haas (SdH) oscillations of MR observed up to B ∼ 4 T are characterized by a single period, giving evidence for one participating group of conduction band electrons. Pressure dependence of the SdH period and concentration reveal a second group of charge carriers, connected to a resonance impurity band with delocalized states. The SdH amplitude, A, exhibits non-universal behavior attributable to its sensitivity to scattering mechanism at low quantum numbers. The parameters characterizing the non-universality of A(T) and the pressure dependence of the cyclotron effective mass, m<sub>c</sub>(p), and of the concentration of conduction electrons, n<sub>SdH</sub>, are given. The dependences of m<sub>c</sub> and the Fermi energy on pressure are consistent with Kane-type non-parabolicity of the conduction band.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0268-1242</s0></fA01><fA02 i1="01"><s0>SSTEET</s0></fA02><fA03 i2="1"><s0>Semicond. sci. technol.</s0></fA03><fA05><s2>24</s2></fA05><fA06><s2>9</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Shubnikov-de Haas effect in n-CdSb:In under pressure</s1></fA08><fA11 i1="01" i2="1"><s1>LAIHO (R.)</s1></fA11><fA11 i1="02" i2="1"><s1>LASHKUL (A. V.)</s1></fA11><fA11 i1="03" i2="1"><s1>LISUNOV (K. G.)</s1></fA11><fA11 i1="04" i2="1"><s1>LÄHDERANTA (E.)</s1></fA11><fA14 i1="01"><s1>Wihuri Physical Laboratory, University of Turku</s1><s2>20014 Turku</s2><s3>FIN</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Physics and Mathematics, Lappeenranta University of Technology</s1><s2>53851 Lappeenranta</s2><s3>FIN</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="03"><s1>Institute of Applied Physics ASM, Academiei Str. 5</s1><s2>2028 Kishinev</s2><s3>MDA</s3><sZ>3 aut.</sZ></fA14><fA20><s2>095023.1-095023.7</s2></fA20><fA21><s1>2009</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>21041</s2><s5>354000171086980240</s5></fA43><fA44><s0>0000</s0><s1>© 2009 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>13 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>09-0452090</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Semiconductor science and technology</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>Magnetoresistance (MR) of single crystals of the group II-V semiconductor n-CdSb doped with In is investigated in magnetic fields B up to 7 T and temperatures T between 1.2 and 2.4 K under hydrostatic pressure p = 0-10 kbar. Shubnikov-de Haas (SdH) oscillations of MR observed up to B ∼ 4 T are characterized by a single period, giving evidence for one participating group of conduction band electrons. Pressure dependence of the SdH period and concentration reveal a second group of charge carriers, connected to a resonance impurity band with delocalized states. The SdH amplitude, A, exhibits non-universal behavior attributable to its sensitivity to scattering mechanism at low quantum numbers. The parameters characterizing the non-universality of A(T) and the pressure dependence of the cyclotron effective mass, m<sub>c</sub>(p), and of the concentration of conduction electrons, n<sub>SdH</sub>, are given. 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